16 – 20.5 GHz GaN Power Amplifier: APN279
Northrop Grumman offers the APN279 GaN power amplifier designed for use in point-to-point and multipoint digital radios, and commercial satcom applications. This monolithic, two-stage power device is fully passivated to ensure rugged and reliable operation.
The APN279 features Au-based bond pad and backside metallization that is compatible with epoxy and eutectic die attach methods.
Additional APN279 specifications include:
- RF Frequency: 16 to 20.5 GHz
- Linear gain: 19 dB, typical
- OP1dB: 36 dBm, typical
- Psat: 41.5dBm, typical
- PAE: >34% @ Psat
- DC Power: 20 Vdc at 712 mA
Download the available datasheet for more features and specifications on the APN279 GaN Power Amplifier.
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